SFF24N50-3 Datasheet | SSDI

Features : - - - - - - - - - - Rugged Construction with Polysilicon Gate Cell Low RDS(ON) and High Transconductance Excellent High Temperature Stability Very Fast Switching Speed Fast Recovery and Superior d V/dt Performance Increased Reverse Energy Capability Low Input and Transfer Capacitance for Easy Paralleling Hermetically Sealed Surface Mount Power Package TX, TXV, Space Level Screening Available Replacement for IXTH24N50 Types Maximum Ratings Drain - Source Voltage Gate - Source Voltage Continuous Drain Current (Tj limited) Avalanche Current Avalanche Energy Operating & Storage Temperature Thermal Resistance, Junction to Case Total Device Dissipation @ TC=25ºC Total Device Dissipation @ TC=55ºC Package Outline: TO-3 Pin Out: Pin 1: GATE Pin 2: SOURCE Pin 3: DRAIN Notes: 1. P/N: SFF 24N50/3: Pin Diameter : 0.043” 0.038” 2. P/N: SFF24N50/3T: Pin Diameter: 0.063” 0.058” Ø.875 MAX 2x Ø.165 .151 SEATING PLANE Symbol VDS VGS ID Repetitive Repetitive Single Pulse IAR EAR EAS Top & Tstg RθJC PD Value 500 ±20 24 21 1 690 -55 to +150 0.75 (typ 0.6) 167 126 .675 .655 Units Volts Volts Amps Amps m J ºC ºC/W WATTS .135 MAX .525 MAX 2x R.188 MAX 2x .043 .038 .440 .420 2x .225 .205 .450 .250 2x .312 MIN 1.197 1.177 NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: F00175E DOC http://../ Solid State Devices, Inc. 14830 Valley View Blvd - La Mirada, Ca 90638 Phone: (562) 404-7855 - Fax: (562) 404 -1773 ssdi@ssdi-power. - .ssdi -power. SFF24N50/3...