SSDI SFF24N50M
N-Channel Power MOSFET
FEATURES
: Rugged Construction with Polysilicon Gate Cell Low RDS(ON) and High Transconductance Excellent High Temperature Stability Very Fast Switching Speed Fast Recovery and Superior dV/dt Performance Increased Reverse Energy Capability Low Input and Transfer Capacitance for Easy Paralleling Ceramic Seals for Improved Hermeticity Hermetically Sealed Surface Mount Power Package TX, TXV, Space Level Screening Available Replacement for IXTH24N50 Types Z = TO-254Z●
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MAXIMUM RATINGS
Drain – Source Voltage Gate – Source Voltage Continuous Collector Current Avalanche Current Avalanche Energy Power Dissipation Operating & Storage Temperature Maximum Thermal Resistance Junction to Case TO-254 (M) TO-254Z (Z) Symbol VDS VGS ID Repetitive Repetitive Single Pulse TC = 25ºC TC = 55ºC IAR EAR EAS PD Top & Tstg RθJC Value 500 ±20 24 21 1 690 150 114 -55 to +150 0.83 Units Volts Volts Amps Amps mJ W ºC ºC/W NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release.