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SFF80N10M - N-Channel Power MOSFET

Key Features

  • Trench gate technology for high cell density Lowest ON-resistance in the industry Enhanced operating temperature range Hermetically Sealed, Isolated Power Package Low Total Gate Charge Fast Switching Enhanced replacement for IRM150 TX, TXV, S-Level screening available Improved (RDS(ON) QG) figure of merit.

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Datasheet Details

Part number SFF80N10M
Manufacturer SSDI
File Size 77.26 KB
Description N-Channel Power MOSFET
Datasheet download datasheet SFF80N10M Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFF80N10M SFF80N10Z 55 AMP (note 1) /100 Volts 12 mO N-Channel Trench Gate MOSFET Features: • • • • • • • • • Trench gate technology for high cell density Lowest ON-resistance in the industry Enhanced operating temperature range Hermetically Sealed, Isolated Power Package Low Total Gate Charge Fast Switching Enhanced replacement for IRM150 TX, TXV, S-Level screening available Improved (RDS(ON) QG) figure of merit DESIGNER’S DATA SHEET TO-254, TO254Z Note 1: maximum current limited by package configuration TO-254 (SFF85N10M) TO-254Z (SFF85N10Z) Maximum Ratings Drain - Source Voltage Gate – Source Voltage Max.