SFF80N10M Datasheet | SSDI

Features : - - - - - - - - - Trench gate technology for high cell density Lowest ON-resistance in the industry Enhanced operating temperature range Hermetically Sealed, Isolated Power Package Low Total Gate Charge Fast Switching Enhanced replacement for IRM150 TX, TXV, S-Level screening available Improved (RDS(ON) QG) figure of merit DESIGNER’S DATA SHEET TO-254, TO254Z Note 1: maximum current limited by package configuration TO-254 (SFF85N10M) TO-254Z (SFF85N10Z) Maximum Ratings Drain - Source Voltage Gate - Source Voltage Max. Continuous Drain Current (package limited) Max. Instantaneous Drain Current (Tj limited) Max. Avalanche current Repetitive Avalanche Energy Total Power Dissipation Operating & Storage Temperature Maximum Thermal Resistance Junction to Case @ TC = 25ºC @ TC = 125ºC @ TC = 25ºC @ TC = 125ºC @ L= 0.1 m H @ L= 0.1 m H @ TC = 25ºC Symbol VDSS VGS ID1 ID2 ID3 ID4 IAR EAR PD TOP & TSTG R0JC Value 100 ±20 55 (note 1) 55 (note 1) 110 70 75 280 250 -55 to +200 0.7 (typ 0.55) Units V V A A A m J W ºC ºC/W TO-TO-254 PIN 3 PIN 2 PIN 3 PIN 1 PIN 2 PIN 1 NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: FT0019A .. Solid State Devices, Inc. 14830 Valley View Blvd - La Mirada, Ca 90638 Phone: (562) 404-7855 - Fax: (562) 404-1773 ssdi@ssdi-power. - .ssdi-power. SFF80N10M SFF80N10Z Symbol VGS = 0V, ID = 250µA VGS = 10V, ID = 30A, Tj= 25o C VGS = 10V, ID = 30A, Tj=125o C VGS = 10V, ID = 30A, Tj= 200o C VGS = 10V, ID = 85A, Tj= 25o C VDS = VGS, ID = 250µA VGS = ±20V VDS = 80V, VGS = 0V, Tj = 25o C VDS = 80V, VGS = 0V, Tj = 125o C VDS = 80V, VGS = 0V, Tj = 200o C VDS = 15V, ID = 30A, Tj = 25o C VGS = 10V VDS = 50V ID = 85A VGS = 10V VDS = 50V ID = 85A RG = 2.5O IF = 50A, VGS = 0V IF = 50A, di/dt = 100A/usec VGS = 0V VDS = 25V f = 1 MHz BVDSS Electrical Characteristics 4/ Drain to Source Breakdown Voltage Min - - - -...