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SFF85N06M - N-Channel Power MOSFET

Key Features

  • Trench gate technology for high cell density Lowest ON-resistance in the industry Enhanced operating temperature range Hermetically Sealed, Isolated Package Low Total Gate Charge Fast Switching Enhanced replacement for IRFP064 TX, TXV, S-Level screening available Improved (RDS(ON) QG) figure of merit.

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Datasheet Details

Part number SFF85N06M
Manufacturer SSDI
File Size 70.23 KB
Description N-Channel Power MOSFET
Datasheet download datasheet SFF85N06M Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFF85N06M SFF85N06Z 55 AMP (note 1) /60 Volts 7 mO N-Channel Trench Gate MOSFET Features: • • • • • • • • • Trench gate technology for high cell density Lowest ON-resistance in the industry Enhanced operating temperature range Hermetically Sealed, Isolated Package Low Total Gate Charge Fast Switching Enhanced replacement for IRFP064 TX, TXV, S-Level screening available Improved (RDS(ON) QG) figure of merit DESIGNER’S DATA SHEET TO-254 and TO-254Z Note 1: maximum current limited by package configuration Maximum Ratings Drain - Source Voltage Gate – Source Voltage Max.