SPD4963-3 Datasheet | SSDI

FEATURES : Fast Recovery: 130 nsec maximum PIV up to 800 Volts Low Reverse Leakage Current Hermetically Sealed Single Chip Construction High Surge Rating Low Thermal Resistance TX, TXV, and Space Level Screening Available 1 AMP 550 - 800 VOLTS 130 nsec FAST RECOVERY RECTIFIER Axial MAXIMUM RATINGS DC Blocking Voltage SPD4963-1 SPD4963-2 SPD4963-3 SPD4963-1 SPD4963-2 SPD4963-3 Symbol Value 500 600 600 550 670 800 1 20 -65 to +175 40 Units Volts Peak Repetitive Reverse Voltage Average Rectified Forward Current (Resistive Load, 60 Hz, Sine Wave, TA=25o C) VBR IO IFSM TOP & Tstg RθJL Volts Amps Amps o Peak Surge Current (8.3 ms Pulse, Half Sine Wave, Superimposed on IO; Allow junction to reach equilibrium between pulses; TA=25o C) Operating and Storage Temperature Maximum Thermal Resistance Junction to Lead, L = 0.375” C o C/W NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RC0051B Solid State Devices, Inc. 14701 Firestone Blvd - La Mirada, Ca 90638 Phone: (562) 404-7855 - Fax: (562) 404-1773 ssdi@ssdi-power. - .ssdi-power. SPD4963-1 thru SPD4963-3 ELECTRICAL CHARACTERISTICS Instantaneous Forward Voltage Drop (IF = 1 ADC, TA = 25°C, 300 - 500µsec Pulse) Instantaneous Forward Voltage Drop (IF = 60 ADC, TA = 25°C, 50 - 500µsec Pulse) Reverse Breakdown Voltage (IR = 100 µADC, TA = 25°C, 300µsec min Pulse) Reverse Leakage Current (Rated VR, 300µsec min Pulse) Storage Charge (IF = 100 m A, TA = 25o C) Reverse Recovery Time (IF = 500 m A, IR = 1 A, IRR = 250 m A, TA = 25o C) Case Outline: SPD4963-1 SPD4963-2 SPD4963-3 ALL SPD4963-1 SPD4963-2 SPD4963-3 TA = 25o C TA = 150o C Symbol VF1 Min - - - - - - - -...