SPD6556 Datasheet | SSDI

FEATURES : Standard Recovery: 5 µsec maximum PIV up to 1500 Volts Low Reverse Leakage Current Hermetically Sealed Single Chip Construction High Voltage Replacement for 1N5553 &1N5554 Low Thermal Resistance Available with 0.040” diameter leads TX, TXV, and Space Level Screening Available Fast Recovery Versions Available. Contact Factory. For higher voltages-See SSDI p/n SDR6W 6 AMPS 1300 VOLTS 5 µsec STANDARD RECOVERY RECTIFIER Axial Surface Mount Square Tab (SMS) MAXIMUM RATINGS Peak Repetitive Reverse Voltage and DC Blocking Voltage Average Rectified Forward Current (Resistive Load, 60 Hz, Sine Wave, TA=25o C) Peak Surge Current (8.3 ms Pulse, Half Sine Wave, Superimposed on IO, allow junction to reach equilibrium between pulses, TA=25o C) Operating and Storage Temperature Maximum Thermal Resistance Junction to Lead, L = 0.125” (Axial Lead) Junction to End Tab (Surface Mount SPD6557 SPD6556 SPD6555 SPD6554 Symbol VRRM VRWM VR IO IFSM TOP & Tstg RθJL RθJE Value 1300 1200 1000 800 6 150 -65 to +175 8 4 Units Volts Amps Amps o C o C/W NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RC0086D SPD6557 Series Solid State Devices, Inc. 14830 Valley View Blvd - La Mirada, Ca 90638 Phone: (562) 404-7855 - Fax: (562) 404-1773 ssdi@ssdi-power. - .ssdi-power. ELECTRICAL CHARACTERISTICS Instantaneous Forward Voltage Drop (IF = 6 Amps, TA = 25o C, 300µsec Pulse) Reverse Leakage Current (At Rated VR, 300µsec pulse minimum) Breakdown Voltage (IR = 50 µA, TA = 25o C) Junction Capacitance (VR = 10 VDC, TA = 25o C, f = 1 MHz) Reverse Recovery Time (IF = 500 m A, IR = 1 A, IRR = 250 m A, TA = 25o C) Case Outline: (Axial) TA = 25o C TA = -55o C TA = 25o C TA = 100o C SPD6557 SPD6556 SPD6555 SPD6554 Symbol VF1 VF2 IR1 IR2 VBR Min - - - - - - - - Max 1.15 1.30 5.0 50 - - - - - - - -...