SPD6628SMS Datasheet | SSDI

FEATURES : Hyper Fast Recovery: 30 nsec maximum Guaranteed High Temp. trr: 60 nsec maximum PIV up to 600 Volts Low Reverse Leakage Current Hermetically Sealed Void Free Construction For High Efficiency Applications TX, TXV, and Space Level Screening Available Replacement for 1N6627 and 1N6628 MAXIMUM RATINGS Peak Repetitive Reverse Voltage and DC Blocking Voltage Average Rectified Forward Current (Resistive Load, 60 Hz, Sine Wave) Symbol SPD6627 SPD6628 TA=55o C at .375” VRRM VRWM VR IO IFSM IFRM TOP & Tstg RθJL RθJE Value 400 600 Units Volts Amps Amps Amps o (Single 8.3 ms Pulse, Half Sine Wave, Superimposed on IO, TA=55o C) (8.3 ms Pulse, allow junction to reach equilibrium between pulses, TA=55o C) Peak Surge Current 75 20 -65 to +175 20 14 Repetitive Peak Surge Current Operating and Storage Temperature Maximum Thermal Resistance Junction to Lead, L = 0.375” (Axial Lead) Junction to End Tab (Surface Mount) Axial Leaded (__) C o C/W Square Tab Surface Mount (SMS) NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RC0113A SPD6627, SPD6627SMS, SPD6628, and SPD6628SMS Solid State Devices, Inc. 14701 Firestone Blvd - La Mirada, Ca 90638 Phone: (562) 404-4474 - Fax: (562) 404-1773 ssdi@ssdi-power. - .ssdi-power. ELECTRICAL CHARACTERISTICS Instantaneous Forward Voltage Drop (TA = 25o C, 300μsec Pulse) Reverse Leakage Current (At Rated VR, 300μsec pulse minimum) Junction Capacitance (VR = 10 VDC, TA = 25o C, f = 1 MHz) Reverse Recovery Time (IF = 500 m A, IR = 1 A, IRR = 250 m A) Case Outline: (Axial) IF = 3 Adc IF = 4 Adc TA = 25o C TA = 100o C Symbol VF1 VF2 IR1 IR2 CJ TA = 25o C TA = 100o C trr1 trr2 Min - - - - - -...