SRM8 Datasheet | SSDI

FEATURES : - - - - - - - - - - - 1/ Replaces DO-4 or DO-5 Standard Recovery: 5 µsec maximum PIV to 1000 Volts Low Reverse Leakage Current Hermetically Sealed Void-Free Construction 1/ Monolithic Single Chip Construction High Surge Rating Low Thermal Resistance Available in Surface Mount Version Equivalent to 5961-94022. TX, TXV and Space Level Screening Available PIND Testing not required on Void-Free Devices per MIL-PRF-19500 Maximum Ratings Peak Repetitive Reverse and DC Blocking Voltage SRM5 SRM6 SRM7 SRM8 SRM9 SRM10 SYMBOL VALUE 500 600 700 800 900 1000 20 UNITS VRRM VRWM VR Volts Average Rectified Forward Current (Resistive Load, 60Hz, Sine Wave, TA = 25 o C Peak Surge Current (8.3 ms Pulse, Half Sine Wave Superimposed on Io, allow junction to reach equilibrium between pulses, TA = 25o C) Operating and Storage Temperature Maximum Thermal Resistance Junction to Lead, L = 3/8" Io Amps IFSM Top & Tstg R θ JL 375 -65 TO +175 3 Amps o C o C/W NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RC0046E SRM5 thru SRM10 Electrical Characteristics Instantaneous Forward Voltage Drop (IF = 20ADC, TA = 25 o C, 300µsec min pulse) Reverse Leakage Current (Rated VR , 300µsec min pulse) Junction Capacitance (VR = 10VDC, TA = 25o C, f = 1MHz) Reverse Recovery Time (IF = 500 m A, IR = 1 A, IRR = 250 m A, TA = 25o C) CASE OUTLINE: AXIAL PRELIMINARY SOLID STATE DEVICES, INC. 14830 Valley View Blvd - La Mirada, Ca 90638 Phone: (562) 404-7855 - Fax: (562) 404-1773 SYMBOL TA = 25o C TA = -55o C TA = 25o C TA = 100o C VF1 VF2 IR1 IR2 CJ t RR MAXIMUM 1.05 1.15 2.0 500 250 5 UNITS VDC µA p F µ sec Ø.060±.003 Ø.310...