SRM8SBTR Datasheet | SSDI

FEATURES : - - - - - - - - - Replaces DO-4 and DO-5 Standard Recovery PIV to 1200 Volts Low Reverse Leakage Hermetically Sealed Void-Free Construction 1/ Monolithic Single Chip Construction High Surge Rating Low Thermal Resistance Available in Axial Lead Versions and Cathode Button. Consult Factory. - TX, TXV and Space Level Screening Available 1/ PIND Testing not required on Void-Free Devices per MIL-PRF-19500 Maximum Ratings Peak Repetitive Reverse and DC Blocking Voltage SRM6SBTR SRM8SBTR SRM10SBTR SRM12SBTR SYMBOL VRRM VRWM VR Io VALUE 600 800 1000 1200 60 UNITS Volts Average Rectified Forward Current (Resistive Load, 60Hz, Sine Wave, TC = 100 o C Peak Surge Current (8.3 ms Pulse, Half Sine Wave Superimposed on Io, allow junction to reach equilibrium between pulses, TA = 25o C) Operating and Storage Temperature Maximum Thermal Resistance Junction to Case Amps IFSM Top & Tstg R2JC 375 -65 TO +175 1.0 Amps o C o C/W NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RC0035D SRM6SBTR thru SRM12SBTR Electrical Characteristics Instantaneous Forward Voltage Drop (TA = 25 o C, 300 - 500 :sec Pulse) Reverse Leakage Current (Rated VR , 300:sec pulse minimum) Junction Capacitance (VR = 10VDC, TA = 25o C, f = 1MHz) Reverse Recovery Time (IF = 500 m A, IR = 1 A, IRR = 250 m A, TA = 25o C) CASE OUTLINE: SURFACE MOUNT BUTTON IF = 20ADC IF = 60ADC TA = 25o C TA = 100o C PRELIMINARY SOLID STATE DEVICES, INC. 14830 Valley View Blvd - La Mirada, Ca 90638 Phone: (562) 404-7855 - Fax: (562) 404-1773 ssdi@ssdi-power. - .ssdi-power. SYMBOL VF1 VF2 IR1 IR2 CJ t RR MAXIMUM 1.05 1.20 20 2.0 250 5 UNITS VDC :A m A p F : sec POWER DERATING CURVE PERCENT OF MAXIMUM FORWARD CURRENT RATING (%) 100o...