SSR2010DJ Datasheet | SSDI

FEATURES : - PIV 100 Volts - Low Forward Voltage Drop - Low Reverse Leakage Current - Hermetically Sealed Isolated Package - Custom Lead Forming Available - Ultrasonic Aluminum Wire Bonds - Guard Ring for Overvoltage Protection - Eutectic Die Attach - 175°C Operating Junction Temperature - TX, TXV, or Space Level Screening Available DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ SSR2010 __ J __ __ │ │ │ └ Screening 2/ __ = Not Screened │ │ │ TX = TX Level │ │ │ TXV = TXV Level │ │ │ S = S Level │ │ │ │ │ └ Lead Bending: 3/ │ │ __ = Straight │ │ UB = Up Bend │ │ DB = Down Bend │ │ │ └ Package: 3/ J = TO-257 │ │ CT = mon Cathode └ Configuration: CA = mon Anode D = Doubler DR = Doubler Reverse Maximum Ratings Peak Repetitive Reverse Voltage and DC Blocking Voltage SSR2010CTJ, SSR2010CAJ SSR2010DJ, SSR2010DRJ Average Rectified Output Current 3/ ° (Resistive Load, 60Hz, Sine Wave, TA=25 C) Peak Surge Current (8.3 ms Pulse, Half Sine Wave, superimposed on IO, allow junction to reach equilibrium between pulses, TA=25°C) Operating and Storage Temperature Maximum Thermal Resistance Junction to Case Junction to Case 3/ 4/ 3/ Symbol VRRM VRWM VR IO IFSM 100 Value Volts Units 10 200 Amps Amps TOP & TSTG RθJC -65 to +175 1.0 2.0 ° ° C/W Available in the following configurations: Rectifier: SSR2010J, SSR2010JDB, and SSR2010JUB (See Data Sheet RS0087) mon Cathode Centertap: SSR2010CTJ, SSR2010CTJDB, and SSR2010CTJUB mon Anode Centertap: SSR2010CAJ, SSR2010CAJDB, and SSR2010CAJUB Doubler: SSR2010DJ, SSR2010DJDB, and SSR2010DJUB Doubler Reverse: SSR2010DRJ, SSR2010DRJDB, and SSR2010DRJUB NOTES: 1/ For ordering information, Price, and Availability- Contact Factory. TO-257(J) 2/ Screened to MIL-PRF-19500. 3/ Per Leg. 4/ Both Legs Tied Together. NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RS0073E Solid State Devices, Inc. 14701 Firestone Blvd...