SSR20C30CT Datasheet | SSDI

Features : - - - - - - - World's 1st Hermetic 20A Si C Centertap Rectifier High Voltage 300V Very High Operating Temperature, 250ºC No Recovery Time (tfr or trr) High Current Operation, 20A Hermetic Packaging TX, TXV, S Level Screening Available DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ SSR20C 30 CT S.5 TX │ │ │ │ │ │ │ │ │ │ │ │ │ └ Screening __ = Not Screened │ TV = TX Level │ TXV= TXV Level │ S = S Level └ Package 2/ S.5 = SMD.5 G = Cerpack J = TO-257 └ Configuration CT = Centertap │ │ └ Voltage 20 = 200 V 30 = 300 V Maximum Ratings Peak Repetitive and Peak Surge Reverse Voltage Average Rectified Forward Current (Resistive Load, 60 Hz Sine Wave) SSR20C20CT SSR20C30CT Per Leg Total Symbol VRRM VRSM Io IFSM PD TOP & Tstg RθJC SMD .5 (S.5) TO-257 (J) Value 200 300 10 20 18 30 -55 to +250 2.2 Units Volts Amps Amps Watts ºC ºC/W Non Repetitive Peak Surge Current (8.3 ms Pulse, Half Sine Wave Superimposed on IO, per leg) Power Dissipation Operating & Storage Temperature Maximum Thermal Resistance Junction to Case Cerpack (G) NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RS0028D Solid State Devices, Inc. 14830 Valley View Blvd - La Mirada, Ca 90638 Phone: (562) 404-7855 - Fax: (562) 404-1773 ssdi@ssdi-power. - .ssdi-power. World’s First Silicon Carbide Centertap Rectifier SSR20C30CT Series Electrical Characteristic (Per Leg) Instantaneous Forward Voltage Drop (TJ = 25ºC, 300 µsec pulse) Instantaneous Forward Voltage Drop (TJ = 150ºC, 300 µsec pulse) Instantaneous Forward Voltage Drop (TJ = -55ºC, 300 µsec pulse) Reverse Leakage Current (VR = Rated VR, TJ = 25ºC, 300 µsec min pulse) Reverse Leakage Current (VR = Rated VR, TJ = 150ºC, 300 µsec min pulse) Junction Capacitance (VR =10 Vdc, TC = 25ºC, f =1MHz) Total Capacitive Charge (VR = 400V, IF = 5A, di/dt = 200A/µs, TJ = 150ºC) NOTES: IF = 5A IF = 10A IF = 5A IF = 10A IF = 5A IF...