SST11LP12 Datasheet | SST

FEATURES : - High Gain: - Typically 35 d B gain across 4.9-5.8 GHz over temperature 0°C to +85°C High linear output power: - ~28 d Bm P1d B (Pulsed single-tone signal) - Meet 802.11a OFDM ACPR requirement up to 23+ d Bm over ~ entire band - Added EVM~4% up to 21 d Bm for 54 Mbps 802.11a signal High power-added efficiency/Low operating current for 54 Mbps 802.11a applications - ~12% @ POUT = 21 d Bm for 54 Mbps Built-in Ultra-low IREF power-up/down control - IREF <3 m A Low idle current - ~130 m A ICQ High speed power up/down - Turn on/off time (10%~90%) <100 ns - Typical power-up/down delay with driver delay included <200 ns - High temperature stability - ~1.5/1.0 d B gain/power variation between 0°C to +85°C - ~1 d B detector variation over 0°C to +85°C - Low shut-down current (< 0.1 µA) - On-chip power detection - 20 d B dynamic range on-chip power detection - Simple input/output matching - Packages available - 16-contact WQFN (3mm x 3mm) - Non-Pb (lead-free) packages available - - - - - APPLICATIONS: - - - - WLAN (IEEE 802.11a) Japan WLAN Hyper LAN2 Multimedia PRODUCT DESCRIPTION The SST11LP12 is a high-power, high-gain power amplifier based on the highly-reliable In Ga P/Ga As HBT technology. The SST11LP12 can be easily configured for high-power, high-efficiency applications with superb power-added efficiency while operating over the entire 802.11a frequency band for U.S., European, and Japanese markets (4.9-5.8 GHz). It typically provides 35 d B gain with 16% poweradded efficiency @ POUT = 23 d Bm. The SST11LP12 has excellent linearity, typically ~4% added EVM at 21 d Bm output power which is essential for 54 Mbps 802.11a operation while meeting 802.11a spectrum mask at 23+ d Bm. SST11LP12 also has wide-range (>20 d B), temperature-stable (~1 d B over 85°C), singleended/differential power detectors which lower users’ cost on power control. The power amplifier IC also features easy board-level usage along with high-speed power-up/down control. Ultralow reference current (total...