SST11LP11 Datasheet | SST

FEATURES : - Gain: - ~24 d B gain across the 4.9-5.8 GHz band - High linear output power: - ~25 d Bm P1d B - EVM~4% at 18 d Bm over 4.9-5.8 GHz for 64 QAM/54 Mbps operation - ACPR below IEEE 802.11a Mask up to 21 d Bm across full band - Low idle current - ~80 m A ICQ - Low shut-down current (< 1 µA) - 20 d B dynamic range on-chip differential linear power detection - Simple RF matching circuits - Packages available - 16-contact VQFN (3mm x 3mm) - Non-Pb (lead-free) packages available APPLICATIONS: - - - - WLAN (IEEE 802.11a) Japan WLAN Hyper LAN2 Multimedia PRODUCT DESCRIPTION The SST11LP11 is a high-performance power amplifier IC based on the highly-reliable In Ga P/Ga As HBT technology. The SST11LP11 is designed to operate over the entire WLAN 802.11a band between 4.9-5.8 GHz frequency band for the U.S., European, and Japanese markets while achieving highly-linear power and low EVM. The SST11LP11 power amplifier IC features easy boardlevel usage along with on-chip linear power detection and power-down control. These features coupled with low current draw at maximum linear power make the SST11LP11 ideal for battery-powered 802.11a WLAN transmitter applications. The SST11LP11 is offered in 16-contact VQFN package. See Figure 1 for pin assignments and Table 1 for pin descriptions. ©2005 SST munications Corp. S71284-00-000 1/05 1 The SST logo and Super Flash are registered Trademarks of Silicon Storage Technology, Inc. These specifications are subject to change without notice. 4.9-5.8 GHz High-Linearity Power Amplifier SST11LP11 Preliminary Specifications FUNCTIONAL BLOCKS FUNCTIONAL BLOCK DIAGRAM VCC1 VCC2 VCC3 14 16 NC RFIN RFIN VCCb 1 2 3 4 5 VREF1 13 12 NC 11 RFOUT 10 RFOUT Bias Circuit 6 VREF2 7 VREF3 8 Det_ref NC 9 Det 1284 B1.1 ©2005 SST munications Corp. S71284-00-000 1/05...