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SST12LP14 - 2.4 GHz Power Amplifier

Key Features

  • High Gain:.
  • Typically 30 dB gain across 2.4~2.5 GHz over temperature 0°C to +80°C.
  • High linear output power:.
  • >26.5 dBm P1dB.
  • Meets 802.11g OFDM ACPR requirement up to 23 dBm.
  • Added EVM ~4% up to 20 dBm for 54 Mbps 802.11g signal.
  • Meets 802.11b ACPR requirement up to 24 dBm.
  • High power-added efficiency/Low operating current for both 802.11g/b.

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Datasheet Details

Part number SST12LP14
Manufacturer SST
File Size 236.09 KB
Description 2.4 GHz Power Amplifier
Datasheet download datasheet SST12LP14 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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A Microchip Technology Company 2.4 GHz Power Amplifier SST12LP14 Data Sheet The SST12LP14 is a high-performance power amplifier IC based on the highlyreliable InGaP/GaAs HBT technology. Easily configured for high-power, high-efficiency applications with superb power-added efficiency, it typically provides 30 dB gain with 22% power added efficiency. The SST12LP14 has excellent linearity while meeting 802.11g spectrum mask at 23 dBm.It is ideal for the final stage power amplification in battery-powered 802.11g/b WLAN transmitter applications, and is offered in 16-contact VQFN package. Features • High Gain: – Typically 30 dB gain across 2.4~2.5 GHz over temperature 0°C to +80°C • High linear output power: – >26.5 dBm P1dB – Meets 802.