SST12LP10 Datasheet | SST

FEATURES : - High Gain: - >26 d B gain across 2.4~2.5 GHz over temperature 0°C to +80°C High linear output power: - ~27 d Bm P1d B - Meets 802.11g OFDM ACPR requirement up to 23 d Bm - Over 20 d Bm linear output with total system EVM<5% for 54 Mbps 802.11g signal - Meets 802.11b ACPR requirement up to 24 d Bm High power-added efficiency/Low operating current for both 802.11g/b applications - ~19% @ POUT = 20 d Bm for 802.11g - ~30% @ POUT = 24 d Bm for 802.11b Ultra-low Reference Current - ~3 m A Total IREF Low idle current - ~60 m A ICQ - High-speed power-up/down - Turn on/off time (10%~90%) <100 ns - Typical power-up/down delay with driver delay included <200 ns - High temperature stability - ~1 d B gain/power variation between 0°C to +80°C - Low shut-down current (< 0.1 µA) - Simple input/output matching - Packages available - 16-contact VQFN (3mm x 3mm) - Non-Pb (lead-free) packages available - - APPLICATIONS: - - - - WLAN (IEEE 802.11g/b) Home RF Cordless phones 2.4 GHz ISM wireless equipment - - PRODUCT DESCRIPTION The SST12LP10 is a high-performance power amplifier based on the highly-reliable In Ga P/Ga As HBT technology. The SST12LP10 can be easily configured for high-power, high-efficiency applications with superb power-added efficiency while operating over the 2.4~2.5 GHz frequency band. It provides over 26 d B gain with 19% power-added efficiency @ POUT = 20 d Bm for 802.11g and 30% poweradded efficiency @ POUT = 24 d Bm for 802.11b. The SST12LP10 has excellent linearity (over 20 d Bm linear output with total system EVM<5%) which is essential for 54 Mbps 802.11g operation. The power amplifier IC also features easy board-level usage along with high-speed power-up/down control and ultra-low reference current (~3 m A). These features coupled with low operating current make the SST12LP10 ideal for the final stage power amplification in battery-powered 802.11g/b WLAN transmitter applications. The SST12LP10 is offered in 16-contact VQFN package. See Figure 1 for pin...