SST12LP15 - High-Gain Power Amplifier

SST

Key Features

High Gain:.
Typically 35 dB gain across 2.4~2.5 GHz over temperature 0°C to +80°C.
High linear output power:.
>29 dBm P1dB (Exceeding maximum rating of average output power, never measure with CW source! Pulsed single-tone source with.

SST12LP15 high-gain power amplifier by SST - Datasheet Preview

Datasheet Details

Part number	SST12LP15
Manufacturer	SST
File Size	211.81 KB
Description	High-Gain Power Amplifier
Datasheet	SST12LP15 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
SST12LP15B	256 QAM Power Amplifier	Microchip
SST12LP14C	High-Gain Power Amplifier	Silicon Storage Technology
SST12LP17E	High-Gain Power Amplifier Module	Microchip
SST12LP19E	High-Efficiency Power Amplifier	Microchip
SST12LP07	High-Gain Power Amplifier	Silicon Storage Technology

Other Datasheets by SST

Part Number	Description
SST12LP15A	High-Power and High-Gain Power Amplifier
SST12LP10	High-Linearity Power Amplifier
SST12LP14	2.4 GHz Power Amplifier
SST12LP14A	High-Gain Power Amplifier
SST12LP00	Power Amplifier

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

A Microchip Technology Company Not recommended for new designs. Please use SST12LP15B 2.4 GHz High-Power, High-Gain Power Amplifier SST12LP15 Not Recommended for New Designs The SST12LP15 is a high-power, high-gain power amplifier based on the highlyreliable InGaP/GaAs HBT technology. Easily configured for high-power, high-efficiency applications with superb power-added efficiency, it typically provides 35 dB gain with 26% power added efficiency @ POUT = 24 dBm for 802.11g and 29% power-added efficiency @ POUT = 25 dBm for 802.11b. The SST12LP15 has excellent linearity while meeting 802.11g spectrum mask at 24+ dBm, and is offered in 16-contact VQFN package. Features • High Gain: – Typically 35 dB gain across 2.4~2.