• Part: SST25LF020A
  • Description: 2 Mbit / 4 Mbit SPI Serial Flash
  • Manufacturer: SST
  • Size: 326.82 KB
Download SST25LF020A Datasheet PDF
SST
SST25LF020A
SST25LF020A is 2 Mbit / 4 Mbit SPI Serial Flash manufactured by SST.
FEATURES : - Single 3.0-3.6V Read and Write Operations - Serial Interface Architecture - SPI patible: Mode 0 and Mode 3 - 33 MHz Max Clock Frequency - Superior Reliability - Endurance: 100,000 Cycles (typical) - Greater than 100 years Data Retention - Low Power Consumption: - Active Read Current: 7 m A (typical) - Standby Current: 8 µA (typical) - Flexible Erase Capability - Uniform 4 KByte sectors - Uniform 32 KByte overlay blocks - Fast Erase and Byte-Program: - Chip-Erase Time: 70 ms (typical) - Sector- or Block-Erase Time: 18 ms (typical) - Byte-Program Time: 14 µs (typical) - Auto Address Increment (AAI) Programming - Decrease total chip programming time over Byte-Program operations - End-of-Write Detection - Software Status - Hold Pin (HOLD#) - Suspends a serial sequence to the memory without deselecting the device - Write Protection (WP#) - Enables/Disables the Lock-Down function of the status register - Software Write Protection - Write protection through Block-Protection bits in status register - Temperature Range - mercial: 0°C to +70°C - Industrial: -40°C to +85°C - Extended: -20°C to +85°C - Packages Available - 8-lead SOIC 150 mil body width for SST25LF020A - 8-lead SOIC 200 mil body width for SST25LF040A - 8-contact WSON (5mm x 6mm) - All non-Pb (lead-free) devices are Ro HS pliant PRODUCT DESCRIPTION SST’s serial flash family features a four-wire, SPI-patible interface that allows for a low pin-count package occupying less board space and ultimately lowering total system costs. SST25LF020A/040A SPI serial flash memories are manufactured with SST’s proprietary, high performance CMOS Super Flash technology. The splitgate cell design and thick-oxide tunneling injector attain better reliability and manufacturability pared with alternate approaches. The SST25LF020A/040A devices significantly improve performance, while lowering power consumption. The total energy consumed is a function of the applied voltage, current, and time of application. Since for any...