SST SST31LF021
The SST31LF021 conform to JEDEC standard flash pinouts and the SST31LF021E conforms to standard EPROM pinouts. The SST31LF021/021E devices write (SRAM or flash) with a 3.0-3.6V power supply. The monolithic SST31LF021/021E devices conform to Software Data Protect (SDP) commands for x8 EEPROMs.| Part No. | SST31LF021 |
|---|---|
| Datasheet | SST31LF021 Download |
| Manufacturer |  SST |
| Description | 2 Mbit Flash 1 Mbit SRAM ComboMemory |
| Buy | Stock & Price |
FEATURES
:● Monolithic Flash + SRAM ComboMemory – SST31LF021/021E: 256K x8 Flash + 128K x8 SRAM
● Single 3.0-3.6V Read and Write Operations
● Concurrent Operation – Read from or Write to SRAM while Erase/Program Flash
● Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention
● Low Power Consumption: – Active Current: 10 mA (typical) for Flash and 20 mA (typical) for SRAM Read – Standby Current: 10 µA (typical)
● Flash Sector-Erase Capability – Uniform 4 KByte sectors
● Latched Address and Data for Flash
● Fast Read Access Times: – SST31LF021 Flash: 70 ns SRAM: 70 ns – SST31LF021E Flash: 300 ns SRAM: 300 ns
● Flash Fast Erase and Byte-Program: – Sector-Erase Time: 18 ms (typical) – Bank-Erase Time: 70 ms (typical) – Byte-Program Time: 14 µs (typical) – Bank Rewrite Time: 4 seconds (typical)
● Flash Automatic Erase and Program Timing – Internal VPP Generation
● Flash End-of-Write Detection – Toggle Bit – Data# Polling
● CMOS I/O Compatibility
●...
