SST31LF021E Overview
The SST31LF021/021E devices are a 256K x8 CMOS flash memory bank bined with a 128K x8 or 32K x8 CMOS SRAM memory bank manufactured with SST’s proprietary, high performance SuperFlash technology. Two pinout standards are available for these devices. The SST31LF021 conform to JEDEC standard flash pinouts and the SST31LF021E conforms to standard EPROM pinouts.
SST31LF021E Key Features
- Monolithic Flash + SRAM boMemory
- SST31LF021/021E: 256K x8 Flash + 128K x8 SRAM
- Single 3.0-3.6V Read and Write Operations
- Concurrent Operation
- Read from or Write to SRAM while Erase/Program Flash
- Superior Reliability
- Endurance: 100,000 Cycles (typical)
- Greater than 100 years Data Retention
- Low Power Consumption
- Active Current: 10 mA (typical) for Flash and 20 mA (typical) for SRAM Read