SST31LF041A Datasheet | SST

FEATURES : - Monolithic Flash + SRAM bo Memory - SST31LF041/041A: 512K x8 Flash + 128K x8 SRAM - Single 3.0-3.6V Read and Write Operations - Concurrent Operation - Read from or Write to SRAM while Erase/Program Flash - Superior Reliability - Endurance: 100,000 Cycles (typical) - Greater than 100 years Data Retention .. - Low Power Consumption: - Active Current: 10 m A (typical) for Flash and 20 m A (typical) for SRAM Read - Standby Current: 10 µA (typical) - Flash Sector-Erase Capability - Uniform 4 KByte sectors - Latched Address and Data for Flash - Fast Read Access Times: - SST31LF041/041A Flash: 70 ns SRAM: 70 ns - SST31LF041A Flash: 300 ns SRAM: 300 ns - Flash Fast Erase and Byte-Program: - Sector-Erase Time: 18 ms (typical) - Bank-Erase Time: 70 ms (typical) - Byte-Program Time: 14 µs (typical) - Bank Rewrite Time: 8 seconds (typical) - Flash Automatic Erase and Program Timing - Internal VPP Generation - Flash End-of-Write Detection - Toggle Bit - Data# Polling - CMOS I/O patibility - JEDEC Standard mand Set - Packages Available - 32-lead TSOP (8mm x 14mm) SST31LF041A - 40-lead TSOP (10mm x 14mm) SST31LF041 PRODUCT DESCRIPTION The SST31LF041/041A devices are a 512K x8 CMOS flash memory bank bined with a 128K x8 CMOS SRAM memory bank manufactured with SST’s proprietary, high performance Super Flash technology. The SST31LF041/041A devices write (SRAM or flash) with a 3.0-3.6V power supply. The monolithic SST31LF041/041A devices conform to Software Data Protect (SDP) mands for x8 EEPROMs. Featuring high performance Byte-Program, the flash memory bank provides a maximum Byte-Program time of 20 µsec. The entire flash memory bank can be erased and programmed byte-by-byte in typically 8 seconds, when using interface features such as Toggle Bit or Data# Polling to indicate the pletion of Program operation. To protect against inadvertent flash write, the SST31LF041/041A devices have on-chip hardware and Software Data Protection schemes. Designed, manufactured, and tested...