SST SST31LF043
The SST31LF041/041A/043/043A devices are a 512K x8 CMOS flash memory bank combined with a 128K x8 or 32K x8 CMOS SRAM memory bank manufactured with SST’s proprietary, high performance SuperFlash technology. The SST31LF041/041A/043/043A devices write (SRAM or flash) with a 3.0-3.6V power supply. The monolithic SST31LF041/041A/043/043A devices conform to Software Data Protect (SDP) commands for x8 EEPROMs.| Part No. | SST31LF043 |
|---|---|
| Datasheet | SST31LF043 Download |
| Manufacturer |  SST |
| Description | 4 Mbit Flash 1 Mbit or 256 Kbit SRAM ComboMemory |
| Buy | Stock & Price |
FEATURES
:● Monolithic Flash + SRAM ComboMemory – SST31LF041/041A: 512K x8 Flash + 128K x8 SRAM – SST31LF043/043A: 512K x8 Flash + 32K x8 SRAM
● Single 3.0-3.6V Read and Write Operations
● Concurrent Operation – Read from or write to SRAM while Erase/Program Flash
● Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention
● Low Power Consumption: – Active Current: 10 mA (typical) for Flash and 20 mA (typical) for SRAM Read – Standby Current: 10 µA (typical)
● Flash Sector-Erase Capability – Uniform 4 KByte sectors
● Latched Address and Data for Flash
● Fast Read Access Times: – SST31LF041/043 Flash: 70 ns SRAM: 70 ns – SST31LF041A/043A Flash: 300 ns SRAM: 300 ns
● Flash Fast Erase and Byte-Program: – Sector-Erase Time: 18 ms (typical) – Bank-Erase Time: 70 ms (typical) – Byte-Program Time: 14 µs (typical) – Bank Rewrite Time: 8 seconds (typical)
● Flash Automatic Erase and Program Timing – Internal VPP Generation
● Flash End-of-Write Detection...
