SST34HF3282 Description
These devices are fabricated using SST’s proprietary, high-performance CMOS SuperFlash technology incorporating the split-gate cell design and thick-oxide tunneling injector to attain better reliability and manufacturability pared with alternate approaches. The SST34HF32xx devices are ideal for applications such as cellular phones, GPS devices, PDAs, and other portable electronic devices in a low power and small...
SST34HF3282 Key Features
- Flash Organization: 2M x16 or 4M x8
- Dual-Bank Architecture for Concurrent Read/Write Operation
- 32 Mbit Top Sector Protection
- SST34HF32x4: 8 Mbit + 24Mbit
- SST34HF3282: 4 Mbit + 28 Mbit
- PSRAM Organization
- 4 Mbit: 256K x16
- 8 Mbit: 512K x16
- Single 2.7-3.3V Read and Write Operations
- Superior Reliability