SST34HF3282 Description
These devices are fabricated using SST’s proprietary, high-performance CMOS SuperFlash technology incorporating the split-gate cell design and thick-oxide tunneling injector to attain better reliability and manufacturability pared with alternate approaches. The SST34HF32x2xC/32x4x devices are ideal for applications such as cellular phones, GPS devices, PDAs, and other portable electronic devices in a low power and...
SST34HF3282 Key Features
- Flash Organization: 2M x16 or 4M x8
- Dual-Bank Architecture for Concurrent Read/Write Operation
- 32 Mbit Top Sector Protection
- SST34HF32x4x: 8 Mbit + 24Mbit
- SST34HF32x2x: 4 Mbit + 28 Mbit
- (P)SRAM Organization
- 4 Mbit: 256K x16
- 8 Mbit: 512K x16
- Single 2.7-3.3V Read and Write Operations
- Superior Reliability