SST39W800A Datasheet | SST

FEATURES : - Organized as 512K x16 - Single Voltage Read and Write Operations - 1.65-1.95V - Superior Reliability - Endurance: 100,000 Cycles (typical) - Greater than 100 years Data Retention - Low Power Consumption (typical values at 5 MHz) - Active Current: 5 m A (typical) - Standby Current: 5 µA (typical) - Sector-Erase Capability - Uniform 2 KWord sectors - Block-Erase Capability - Uniform 32 KWord blocks - Fast Read Access Time - 90 ns - Latched Address and Data - Fast Erase and Word-Program - Sector-Erase Time: 36 ms (typical) - Block-Erase Time: 36 ms (typical) - Chip-Erase Time: 140 ms (typical) - Word-Program Time: 28 µs (typical) - Automatic Write Timing - Internal VPP Generation - End-of-Write Detection - Toggle Bit - Data# Polling - CMOS I/O patibility - JEDEC Standard - Flash EEPROM Pinouts and mand sets - Packages Available - 48-ball TFBGA (6mm x 8mm) - 48-ball WFBGA (5mm x 6mm) Micro-Package - 48-ball XFLGA (5mm x 6mm) Micro-Package - All non-Pb (lead-free) devices are Ro HS pliant PRODUCT DESCRIPTION The SST39WF800A device is a 512K x16 CMOS Multi Purpose Flash (MPF) manufactured with SST’s proprietary, high performance CMOS Super Flash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability pared with alternate approaches. The SST39WF800A writes (Program or Erase) with a 1.65-1.95V power supply. This device conforms to JEDEC standard pin assignments for x16 memories. Featuring high-performance Word-Program, the SST39WF800A device provides a typical Word-Program time of 28 µsec. The device uses Toggle Bit or Data# Polling to detect the pletion of the Program or Erase operation. To protect against inadvertent writes, it has on-chip hardware and software data protection schemes. Designed, manufactured, and tested for a wide spectrum of applications, this device is offered with a guaranteed typical endurance of 100,000 cycles. Data retention is rated at greater than 100 years. The...