2STW1695 - High Power PNP Epitaxial Planar Bipolar Transistor

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ST Microelectronics

Part number	2STW1695
Manufacturer	STMicroelectronics
File Size	215.20 KB
Description	High Power PNP Epitaxial Planar Bipolar Transistor
Datasheet	2STW1695 Datasheet
Additional preview pages of the 2STW1695 datasheet.

The device is a PNP transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology.

High breakdown voltage VCEO = -140V Complementary to 2STW4468 Typical ft =20MHz Fully characterized at 125 oC In compliance with the 2002/93/EC European Directive 2 1 3.

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Published: Mar 27, 2007 |