2STW1695
Overview
The device is a PNP transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour.
- High breakdown voltage VCEO = -140V Complementary to 2STW4468 Typical ft =20MHz Fully characterized at 125 oC In compliance with the 2002/93/EC European Directive 2 1 3
