Datasheet Details
| Part number | B9NC60 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 401.70 KB |
| Description | STB9NC60 |
| Datasheet | B9NC60_STMicroelectronics.pdf |
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Overview: N-CHANNEL 600V - 0.6Ω - 9A - D2PAK/I2PAK PowerMesh™II MOSFET TYPE STB9NC60 STB9NC60-1 .. s s s s s STB9NC60 STB9NC60-1 VDSS 600 V 600 V RDS(on) < 0.75 Ω < 0.75 Ω ID 9.0 A 9.0 A TYPICAL RDS(on) = 0.
| Part number | B9NC60 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 401.70 KB |
| Description | STB9NC60 |
| Datasheet | B9NC60_STMicroelectronics.pdf |
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The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™.
The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVER s D2PAK I2PAK INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (1) PTOT dv/dt Tstg Tj February 2002 Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max.
| Part Number | Description |
|---|---|
| B9NK70Z | STB9NK70Z |
| B9NK70Z-1 | N-channel MOSFET |