STB9NC60 datasheet by STMicroelectronics.
| Part number | STB9NC60 |
|---|---|
| Datasheet | STB9NC60_STMicroelectronics.pdf |
| File Size | 185.46 KB |
| Manufacturer | STMicroelectronics |
| Description | N-Channel Enhancement Mode MOSFET |
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The PowerMESH™ II is the evolution of the first generation of MESH OVERLAY™ . The layout refinements introduced greatly improve the Ron area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. Unit V µA µA nA ON (1) Symbol VGS(th) R DS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS, ID = 250µA VGS...
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