BTA20BW Datasheet | STMicroelectronics

EATURES High mutation: (d I/dt)c > 18A/ms without snubber High surge current: ITSM = 200A VDRM up to 800V BTA Family: Insulating voltage = 2500V(RMS) (UL recognized: E81734) s s s s A2 G A1 DESCRIPTION The BTA/BTB20 BW/CW triac family are high performance glass passivated chips technology. The SNUBBERLESS™ concept offer suppression of RC network and it is suitable for application such as phase control and static switching on inductive or resistive load. A1 A2 TO-220AB ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) ITSM I2t d I/dt Parameter RMS on-state current (360° conduction angle) Non repetitive surge peak on-state current (Tj initial = 25°C) I2t value Critical rate of rise of on-state current Gate supply: IG = 500m A d IG/dt = 1A/µs Storage and operating junction temperature range Maximum lead soldering temperature during 10s at 4.5mm from case BTA BTB Tc = 70°C Tc = 90°C tp = 8.3ms tp = 10ms tp = 10ms Repetitive F = 50Hz Non repetitive Tstg Tj Tl 210 200 200 20 100 -40 to +150 -40 to +125 260 °C °C A2s A/µs A Value 20 Unit A BTA/BTB20-...BW/CW Symbol VDRM VRRM Parameter 600 700 700 V Unit 600 Repetitive peak off-state voltage Tj = 125°C September 2001 - Ed: 1A 1/6 BTA20 BW/CW BTB20 BW/CW THERMAL RESISTANCE Symbol Rth (j-a) Rth (j-c) DC Rth (j-c) AC Junction to ambient Junction to case for DC Junction to case for 360° conduction angle (F = 50Hz) BTA BTB BTA BTB Parameter Value 60 2.8 1.7 2.1 1.3 °C/W Unit °C/W °C/W GATE CHARACTERISTICS (maximum values) PG(AV) = 1W PGM = 10W (tp = 20µs) IGM = 4A (tp = 20µs) VGM = 16V (tp = 20µs) ELECTRICAL CHARACTERISTICS BTA / BTB20 Symbol IGT Test conditions VD = 12V (DC) RL = 33Ω Tj = 25°C Quadrant BW I - II - III MIN. MAX. VGT VGD tgt IL VD = 12V (DC) VD = VDRM RL = 33Ω RL = 3.3kΩ Tj = 25°C Tj =125°C Tj = 25°C Tj = 25°C I - II - III I - II - III I - II - III I - III II...