BTW68 Datasheet | STMicroelectronics

FEATURES : Symbol IT(RMS) V DRM/VRRM IGT Value 50 600 to 1200 80 Unit A V m A DESCRIPTION Available in high power packages, the BTW67 / BTW69 Series is suitable in applications where power handling and power dissipation are critical, such as solid state relays, welding equipment, high power motor control. Based on a clip assembly technology, they offer a superior performance in surge current handling capabilities. Thanks to their internal ceramic pad, they provide high voltage insulation (2500V RMS), plying with UL standards (file ref: E81734). ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) RMS on-state current (180° conduction angle) Average on-state current (180° conduction angle) Non repetitive surge peak on-state current Parameter RD91 TOP3 Ins. RD91 TOP3 Ins. tp = 8.3 ms Tj = 25°C tp = 10 ms I ²t d I/dt IGM PG(AV) Tstg Tj VRGM I²t Value for fusing Critical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 ns Peak gate current Average gate power dissipation Storage junction temperature range Operating junction temperature range Maximum peak reverse gate voltage F = 60 Hz tp = 20 µs Tj = 25°C Tj = 125°C Tj = 125°C Tj = 125°C 580 1680 50 8 1 - 40 to + 150 - 40 to + 125 5 A2 S A/µs A W °C V 1/5 .. RD91 (BTW67) TOP3 (BTW69) Value Tc = 70°C 50 Tc = 75°C Tc = 70°C 32 Tc = 75°C 610 Unit A IT(AV) ITSM April 2001 - Ed: 4 .. .. BTW67 and BTW69 Series ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) Symbol IGT VD = 12 V VGT VGD IH IL d V/dt VTM Vt0 Rd IDRM IRRM VD = VDRM RL = 3.3 kΩ IT = 500 m A IG = 1.2 I GT VD = 67 % VDRM Gate open ITM = 100 A tp = 380 µs Tj = 125°C Tj = 25°C Tj = 125°C Tj = 125°C Tj = 25°C Tj = 125°C Gate open Tj = 125°C RL = 33 Ω Test Conditions MIN. MAX. MAX. MIN. MAX. MAX. MIN. MAX. MAX. MAX. MAX. Value 8 80 1.3 0.2 150 200 1000 1.9 1.0 8.5 10 5 m A V V m A m A V/µs V V mΩ µA m A Unit Threshold voltage Dynamic resistance VDRM = VRRM THERMAL RESISTANCES Symbol Rth(j-c) Rth(j-a) Junction to case (DC) Junction to...