BUB931T Datasheet | STMicroelectronics

® BU931T BUB931T HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTONS s s s s VERY RUGGED BIPOLAR TECHNOLOGY HIGH OPERATING JUNCTION TEMPERATURE WIDE RANGE OF PACKAGES SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX ”T4”) 2 3 1 3 APPLICATIONS s HIGH RUGGEDNESS ELECTRONIC IGNITIONS TO-220 D2PAK TO-263 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEO V EBO IC I CM IB I BM P t ot T stg Tj Parameter Collector-Emitter Voltage (VBE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current Base Current Base Peak Current Total Dissipation at Tc = 25 C Storage T emperature Max. O perating Junction Temperature o Value 500 400 5 10 15 1 5 125 -65 to 175 175 Uni t V V V A A A A W o o C C 1/7 January 1999 BU931T / BUB931T THERMAL DATA R t hj-ca se Thermal Resistance Junction-case Max 1.2 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified) Symb ol I CES I CEO I EBO Parameter Collector Cut-off Current (V BE = 0) Collector Cut-off Current (I B = 0) Emitter Cut-off Current (I C = 0) Test Cond ition s V CE = 500 V V CE = 500 V V CE = 450 V V CE = 450 V V EB = 5 V I C = 100 m A L = 10 m H I B = 0 V c la mp = RATED V CEO (See fig.4) IC = 7 A IC = 8 A IC = 7 A IC = 8 A IC = 5 A I B = 70 m A I B = 100 m A I B = 70 m A I B = 100 m A V CE = 10 V 300 2.5 8 V A 400 1.6 1.8 2.2 2.4 Tj = 125 C Tj = 125 C o o Min. Typ . Max. 100 0.5 100 0.5 20 Un it µA m A µA m A m A V V V V V V CEO( SUS) ∗ Collector-Emitter Saturation Voltage V CE(sat )∗ V BE(s at)∗ h F E∗ VF Collector-Emitter Saturation Voltage Base-Emitt er Saturation Voltage DC Current Gain Diode F orward Voltage I F = 10 A Functional T est (see fig. 1) V CC = 24 V Vc la mp = 400 V L= 7 m H V CC = 12 V Vc la mp = 300 V L= 7 m H I C = 7 A I B = 70 m A R BE = 47 Ω V BE = 0 ts tf INDUCTIVE LO AD Storage Time Fall Time (see fig. 3) 15 0.5 µs µs ∗ Pulsed: Pulse duration = 300 µs,...