BUB941ZT Datasheet | STMicroelectronics

® BU941ZT/BU941ZTFP BUB941ZT HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON s s s s s VERY RUGGED BIPOLAR TECHNOLOGY BUILT IN CLAMPING ZENER HIGH OPERATING JUNCTION TEMPERATURE WIDE RANGE OF PACKAGES SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX ”T4”) TO-220 3 1 2 1 2 TO-220FP APPLICATIONS s HIGH RUGGEDNESS ELECTRONIC IGNITIONS D2PAK TO-263 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CEO V EBO IC I CM IB I BM P t ot T stg Tj Parameter Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current Base Current Base Peak Current BU941Z T Total Dissipation at Tc = 25 o C Storage T emperature Max. O perating Junction Temperature 150 -65 to 175 175 Valu e 350 5 15 30 1 5 BU941Z TF P 55 -65 to 175 175 BUB941ZT 150 -65 to 175 175 W o o Uni t V V A A A A January 1999 1/8 BU941ZT / BU941ZTFP / BUB941ZT THERMAL DATA TO -220 D2PAK R t hj-ca se Thermal Resistance Junction-case Max 1 T O-220F P 2.7 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified) Symb ol I CEO I EBO V CL ∗ V CE(sat )∗ V BE(s at)∗ h F E∗ VF Parameter Collector Cut-off Current (I B = 0) Emitter Cut-off Current (I C = 0) Clamping Voltage Collector-Emitter Saturation Voltage Base-Emitt er Saturation Voltage DC Current Gain Test Cond ition s V CE = 300 V V CE = 300 V V EB = 5 V I C = 100 m A IC = 8 A I C = 10 A IC = 8 A I C = 10 A IC = 5 A I B = 100 m A IB = 250 m A I B = 100 m A IB = 250 m A V CE = 10 V 300 2.5 10 V A 350 Tj = 125 C o Min. Typ . Max. 100 0.5 20 500 1.8 1.8 2.2 2.5 Un it µA m A m A V V V V V Diode F orward Voltage I F = 10 A Functional T est (see fig. 1) V CC = 24 V L= 7 m H V CC = 12 V L= 7 m H V clamp = 300V IB = 70 m A IC = 7 A R BE = 47 Ω V BE = 0 ts tf INDUCTIVE LO AD Storage Time Fall Time (see fig. 3) 15 0.5 µs µs ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Safe Operating Area DC Current Gain 2/8 BU941ZT /...