BUF405AFP Datasheet | STMicroelectronics

DESCRIPTION These Easy-to-Drive FASTSWITCH NPN power transistors are specially designed for high reliability industrial and professional power driving applications such us motor drives and off-line switching power supplies. ETD transistors will operate using easy drive circuits at up to 100KHz; this helps to simplify designs and improve reliability. The superior switching performance and low crossover losses reduce dissipation and consequently lowers the equipment operating temperature. TO-220 TO-220FP INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symb ol V CEV V CEO VEBO IC I CM IB I BM P tot T s tg Tj Parameter BUF405A Collector-Emitter Voltage (V BE = -1.5 V) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current (tp < 5 ms) o T otal Dissipation at T c = 25 C Storage Temperature Max O peration Junction T emperature 1000 450 7 7.5 15 3 4.5 80 -65 to 150 150 39 Valu e BUF405AF P V V V A A A A W o C o C Un it January 1999 1/6 BUF405A / BUF405AFP THERMAL DATA T O-220 R t hj-ca se Thermal Resistance Junction-Case Max 1.56 TO-220F P 3.2 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified) Symb ol I CER I CEV I EBO Parameter Collector Cut-off Current (R BE = 5 Ω) Collector Cut-off Current (I B = 0) Emitter Cut-off Current (I C = 0) Test Cond ition s V CE = V CEV V CE = V CEV T c = 100 C o Min. Typ . Max. 0.1 0.5 0.1 0.5 1 Un it m A m A m A m A m A V V V CE = V CEV V BE = -1.5 V V CE = V CEV V BE = -1.5 V T c =100 o C V BE = 5 V I C = 200 m A I E = 50 m A IC IC IC IC IC IC IC IC = = = = = = = = 2.5 A 2.5 A 5 A 5 A 2.5 A 2.5 A 5 A 5 A IB = 0.25 A IB = 0.25 A IB = 1 A IB = 1 A IB IB IB IB = = = = 0.25 A 0.25 A 1 A 1 A L = 25 m H 450 7 0.8 V CEO(sus )∗ Collector-Emitter Sustaining Voltage V EBO V CE(sat )∗ Emitter Base Voltage (I C = 0) Collector-Emitter Saturation Voltage Tc =100 C T c =100 C 0.9 T c =100 C Tc =100 C 40 30 60 2.1 o o...