BUF420 Datasheet | STMicroelectronics

DESCRIPTION The BUF420 and BUF420M are manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capacity. They use a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. The BUF series is designed for use in high-frequency power supplies and motor control applications. 1 2 TO-3 (version ”R”) TO-218 INTERNAL SCHEMATIC DIAGRAM For TO-3 : C = Tab E = Pin2. ABSOLUTE MAXIMUM RATINGS Symb ol V CEV V CEO VEBO IC I CM IB I BM P tot T s tg Tj July 1997 Parameter Collector-Emitter Voltage (VBE = -1.5 V) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current (tp < 5 ms) T O-218 T otal Dissipation at Tc = 25 C Storage Temperature Max O peration Junction Temperature o Valu e 850 450 7 30 60 6 9 TO -3 200 -65 to 150 150 200 Un it V V V A A A A W o o C C 1/7 BUF420 / BUF420M THERMAL DATA T O-218 R t hj-ca se Thermal Resistance Junction-Case Max 0.63 TO-3 0.63 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified) Symb ol I CER I CEV I EBO Parameter Collector Cut-off Current (R BE = 5 Ω) Collector Cut-off Current (IB = 0) Emitter Cut-off Current (I C = 0) Test Cond ition s V CE = V CEV V CE = V CEV T c = 100 C o Min. Typ . Max. 0.2 1 0.2 1 1 Un it m A m A m A m A m A V V V CE = V CEV V BE = -1.5 V o V CE = V CEV V BE = -1.5 V Tc =100 C V BE = 5 V I C = 200 m A I E = 50 m A IC IC IC IC IC IC IC IC = = = = = = = = 10 10 20 20 10 10 20 20 A A A A A A A A IB IB IB IB IB IB IB IB = = = = = = = = 1 1 2 2 1 1 2 2 A A A A A A A A L = 25 m H 450 7 0.8 V CEO(sus )∗ Collector-Emitter Sustaining Voltage V EBO V CE(sat )∗ Emitter Base Voltage (I C = 0) Collector-Emitter Saturation Voltage T c =100 C T c =100 C 0.9 T c =100 C 1.1 T c =100 C 100 70 150 2.1 o o o o 2.8 0.5 2 1.5 1.5 V V V V V V V V A /µ s A /µ s A /µ s V V V V µs µs µs V BE(s...