Datasheet4U Logo Datasheet4U.com

BUF420 Datasheet Silicon NPN Power Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon NPN Power Transistor.

General Description

·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V(Min.) ·High Speed Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in high-frequency power supplies and motor control applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEV Collector-Emitter Voltage VBE= -1.5V 850 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 30 A ICM Collector Current-Peak 60 A IB Base Current-Continuous 6 A IBM Base Current-peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 9 A 200 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 0.63 ℃/W BUF420 isc website:.iscsemi.

1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BUF420 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.

BUF420 Distributor