BUF420AW Datasheet | STMicroelectronics

DESCRIPTION The BUF420AW is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capacity. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. The BUF series is designed for use in high-frequency power supplies and motor control applications. TO-247 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CEV V CEO V EBO IC I CM IB I BM P tot T stg Tj Parameter Collector-Emitter Voltage (V BE = -1.5V) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Base Current Base Peak Current (t p < 5 ms) Total Dissipation at T c = 25 C Storage Temperature Max. Operating Junction Temperature o Value 1000 450 7 30 60 6 9 200 -65 to 150 150 Unit V V V A A A A W o o March 2002 1/8 THERMAL DATA R thj-case Thermal Resistance Junction-Case Max 0.63 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified) Symbol I CER I CEV IEBO Parameter Collector Cut-off Current (R BE = 5 Ω) Collector Cut-off Current (V BE = -1.5V) Emitter Cut-off Current (I C = 0) Test Conditions V CE = 1000 V V CE = 1000 V V CE = 1000 V V CE = 1000 V V EB = 5 V I C = 200 m A L = 25 m H 450 T C = 100 o C T C = 100 o C Min. Typ. Max. 0.2 1 0.2 1 1 Unit m A m A m A m A m A V V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0) V EBO VCE(sat) ∗ Emitter Base Voltage (I C = 0) Collector-Emitter Saturation Voltage I E = 50 m A IC IC IC IC IC IC IC IC = = = = = = = = 10A 10 A 20 A 20 A 10A 10 A 20 A 20 A IB IB IB IB IB IB IB IB = = = = = = = = 1 1 4 4 1 1 4 4 A A A A A A A A 7 0.8 T C =100o C 0.5 T C =100o C 0.9 T C =100o C 1.1 T C =100o C 100 70 150 2.1 8 1.1 4 1 0.05 0.08 2 0.1 0.18 500 1.5 1.5 2 2.8 V V V V V V V V V A /µ s A /µ s A /µ s V V V V µs µs µs µs µs µs V V BE(sat) ∗ Base-Emitter Saturation Voltage di c /dt Rate of rise on-state Collector Current V CC = 300...