BUH2M20AP Description
The BUH2M20AP is manufactured using Multiepitaxial Mesa technology for cost-effective high performance. 3 1 2 TO-220 INTERNAL SCHEMATIC DIAGRAM RATINGS Symbol V CBO V CEO V EBO IC I CM P tot T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Total Dissipation at T c = 25 o C Storage Temperature...