BUH2M20AP Datasheet | STMicroelectronics

DESCRIPTION The BUH2M20AP is manufactured using Multiepitaxial Mesa technology for cost-effective high performance. 3 1 2 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC I CM P tot T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Total Dissipation at T c = 25 o C Storage Temperature Max. Operating Junction Temperature Value 2000 1200 5 30 40 20 -65 to 150 150 Unit V V V m A m A W o o September 1998 1/4 THERMAL DATA R thj-case Thermal Resistance Junction-case Max 6.25 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified) Symbol I CBO I EBO VCEO V EBO V CE(sat) ∗ V BE(sat) ∗ h FE ∗ C ob Parameter Collector Cut-off Current (I E = 0) Emitter Cut-off Current (I C = 0) Collector-Emitter Breakdown Voltage Emitter-Base Voltage (I C = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Output Capacitance Test Conditions V CE = 2000 V V EB = 4 V IC = 1 m A I E = 10 µ A I C = 2 m A I C = 2 m A I C = 2 m A I C = 10 m A V CB = 100 V I B = 400 µ A I B = 400 µ A V CE = 10 V V CE = 10 V IC = 0 f = 1MHz 10 10 3 p F 1200 5 5 2 Min. Typ. Max. 5 10 Unit µA µA V V V V ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Safe Operating Area 2/4 TO-220 MECHANICAL DATA DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 0.551 0.116 0.620 0.260 0.154 0.151 mm TYP. MAX. 4.60 1.32 2.72 MIN. 0.173 0.048 0.094 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 inch TYP. MAX. 0.181 0.051 0.107 P011C 3/4 Information furnished is believed to be accurate and reliable. However, STMicroelectronics...