BUL742A Datasheet | STMicroelectronics

DESCRIPTION The BUL742A is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. Thanks to an increased intermediate layer, it has an intrinsic ruggedness which enables the transistor to withstand an high collector current level during breakdown condition, without using the transil protection usually necessary in typical converters for lamp ballast. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEO V EBO IC I CM IB I BM P tot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0, I B ≤ 2 A, t p < 10 µ s, T j < 150 o C) Collector Current Collector Peak Current (t p <5 ms) Base Current Base Peak Current (t p <5 ms) Total Dissipation at Tc = 25 o C Storage Temperature Max. Operating Junction Temperature Value 950 400 V (BR)EBO 4 8 2 4 70 -65 to 150 150 Unit V V V A A A A W o o C C 1/5 October 2003 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 1.78 62.5 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified) Symbol I CES I CEO Parameter Collector Cut-off Current (V BE = 0) Collector Cut-off Current (I B = 0) Test Conditions V CE = 950 V V CE = 400 V I C = 10 m A L = 25 m H 400 Min. Typ. Max. 100 250 Unit µA µA V V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0) V (BR)EBO Emitter-Base Breakdown Voltage (I C = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain RESISTIVE LOAD Storage Time Fall Time Avalanche Energy I E = 1 m A V CE(sat) ∗ V BE(sat) ∗ h FE ∗ IC = 1 A I C = 3.5 A I C = 3.5 A I C = 800 m A I C = 10 m A V CC = 250 V I B1 = 0.5 A t p = 30 µ s L = 2 m H I B = 0.2 A IB = 1 A IB = 1 A VCE = 3 V V CE = 5 V I C = 2.5 A I B2 = -1 A (see figure 2) (see figure 1) 6 16 10 0.9 100 0.5 1.5 1.5 40 V V V ts tf E sb µs ns m J ∗ Pulsed: Pulse duration = 300...