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BUL742 - NPN Transistor

General Description

The BUL742 is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability.

It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintening the wide RBSOA.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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® BUL742 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s s HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED LARGE RBSOA 3 1 2 APPLICATIONS ELECTRONIC BALLAST FOR FLUORESCENT LIGHTING s SWITCH MODE POWER SUPPLIES s DESCRIPTION The BUL742 is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintening the wide RBSOA.