BUL742
BUL742 is NPN Transistor manufactured by STMicroelectronics.
DESCRIPTION
The BUL742 is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintening the wide RBSOA. Thanks to an increased intermediate layer, it has an intrinsic ruggedness which enables the transistor to withstand an high collector current level during breakdown condition, without using the transil protection usually necessary in typical converters for lamp ballast.
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CES V CEO V EBO IC I CM IB I BM P tot T stg Tj June 2001 Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0, I B = 0.75 A, t p < 10 µ s, T j < 150 o C) Collector Current Collector Peak Current (t p <5 ms) Base Current Base Peak Current (t p <5 ms) Total Dissipation at Tc = 25 C Storage Temperature Max. Operating Junction Temperature o
Value 900 400 BV EBO 4 8 2 4 70 -65 to 150 150
Unit V V V A A A A W o o
C C 1/5
THERMAL DATA
R thj-case R thj-amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 1.78 62.5 o o
C/W C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
Symbol I CES Parameter Collector Cut-off Current (V BE = 0) Test Conditions V CE = 900 V I C = 100 m A L = 25 m H 400 Min. Typ. Max. 100 Unit µA V
V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0) BV EBO Emitter-Base Breakdown Voltage (I C = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain RESISTIVE LOAD Storage Time Fall Time Avalanche Energy
I E = 1 m A
V CE(sat) ∗
IC = 1 A IC = 2 A IC = 4 A IC = 2 A I C = 250 m A IC = 2 A V CC = 125 V I B1 = 45 m A t p = 300 µ s L = 2 m H
I B = 0.2 A I B = 0.4 A I B = 0.8 A I B = 0.4 A V CE = 5 V V CE = 5 V I C = 0.5 A I B2 = -45 m A 6 35 10 11 250
0.5 1.0 1.5 1.5 70 35
V BE(sat)...
