BUL742C Datasheet | STMicroelectronics

Features - Low spread of dynamic parameters - High voltage capability - Minimum lot-to-lot spread for reliable operation - Very high switching speed Applications - Electronic ballast for fluorescent lighting - Switch mode power supplies Description The devices are manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. Thanks to an increased intermediate layer, it has an intrinsic ruggedness which enables the transistor to withstand an high collector current level during breakdown condition, without using the transil protection usually necessary in typical converters for lamp ballast. 3 2 1 TO-220 I²PAK 3 2 1 TO-220FP 3 1 D²PAK Figure 1. Internal schematic diagram Table 1. Device summary Order codes Markings BUL742CFP BUL742CFP BULB742C-1 BULB742C BULB742CT4 BULB742C November 2010 Packages...