BUL804 Description
lete ucThe device is manufactured using high voltage dMulti-Epitaxial Planar technology for high so roswitching speeds and medium voltage capability. b PIt uses a Cellular Emitter structure with planar - O teedge termination to enhance switching speeds ) lewhile maintaining the wide RBSOA. t(s oThe device is designed for use as PFC in high c bsfrequency ballast half Bridge voltage fed topology.
BUL804 Key Features
- NPN Transistor
- High voltage capability
- Low spread of dynamic parameters
- O teedge termination to enhance switching speeds ) lewhile maintaining the wide RBSOA. t(s oThe device is designed for u