BUL805 Overview
The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds. The device is designed for use as PFC in high frequency ballast half Bridge voltage fed topology.
BUL805 Key Features
- NPN Transistor High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation