BUT70W
BUT70W is HIGH POWER NPN TRANSISTOR manufactured by STMicroelectronics.
DESCRIPTION
The BUT70W is a Multiepitaxial planar NPN transistor in TO-247 plastic package. It’s intented for use in high frequency and efficiency converters such us motor controllers and industrial equipment.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CEV V CEO V EBO I E(RMS) I EM IB I BM P tot T stg Tj Parameter Collector-emitter Voltage (V BE = -1.5V) Collector-emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Emitter Current Emitter Peak Current Base Current Base Peak Current Total Power Dissipation at T case < 25 C Storage Temperature o
Value 200 125 7 40 120 8 24 200 -65 to 150 150
Unit V V V A A A A W o o
Max Operating Junction Temperature
February 2002
1/4
THERMAL DATA
R thj-case Thermal Resistance Junction-case Max 0.63 o
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
Symbol I CER I CEV IEBO Parameter Collector Cut-off Current (R BE = 5 Ω ) Collector Cut-off Current (V BE = -1.5V) Emitter Cut-off Current (I C = 0) Test Conditions V CE = 200 V V CE = 200 V V CE = 200 V V CE = 200 V V EB = 5 V I C = 0.2 A L = 25 m H 125 T C = 100 o C T C = 100 o C Min. Typ. Max. 1 5 1 4 1 Unit m A m A m A m A m A V
V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0) V(BR)EBO Emitter-Base Breakdown Voltage (I C = 0) Collector-Emitter Saturation Voltage
I E = 50 m A
VCE(sat) ∗
IC IC IC IC IC IC IC IC
= = = = = = = =
70 70 35 35 70 70 35 35
A A A A A A A A
IB IB IB IB IB IB IB IB
= = = = = = = =
7A 7A T C = 100 o C 1.75 A 1.75 A T C = 100 o C 7A 7A T C = 100 o C 1.75 A 1.75 A T C = 100 o C I B1 = 3.5 A T C = 100 o C 140
0.9 1.5 0.9 1.2 1.8 1.9 1.4 1.4
V V V V V V V V A/ µ s
V BE(sat) ∗
Base-Emitter Saturation Voltage dic /d t ∗
Rated of Rise of on-state Collector Current
V CC = 100 V tp = 3 µs
RC = 0
∗ Pulsed: Pulse duration = 300 µs, duty cycle < 2 %
INDUCTIVE LOAD
Symbol ts tf tc Parameter Storage Time Fall Time Cross Over Time Test Conditions I C = 35 A V BB = -5 V ΙB1 = 1.75...
