• Part: DB-55008L-318
  • Description: RF power amplifier using 1 x PD55008L-E N-channel enhancement-mode lateral MOSFETs
  • Manufacturer: STMicroelectronics
  • Size: 538.96 KB
Download DB-55008L-318 Datasheet PDF
STMicroelectronics
DB-55008L-318
DB-55008L-318 is manufactured by STMicroelectronics.
.. RF power amplifier using 1 x PD55008L-E N-channel enhancement-mode lateral MOSFETs Preliminary Data Features - - - - - - - Excellent thermal stability Frequency: 225 - 318 MHz Supply voltage: 13.6 V Output power: 8 W Power gain: 13.5 ± 0.7 dB Efficiency: 51 % - 79 % BeO free amplifier Description The DB-55008L-318 is a mon source N-channel enhancement-mode lateral field effect RF power amplifier designed for VHF SEISMIC applications. Table 1. Mechanical specification: L = 60 mm, W = 30 mm Device summary Order codes DB-55008L-318 February 2009 Rev 1 1/14 .st. 14 This is preliminary information on a new product now in development or...