DB-55008L-318
DB-55008L-318 is manufactured by STMicroelectronics.
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RF power amplifier using 1 x PD55008L-E N-channel enhancement-mode lateral MOSFETs
Preliminary Data
Features
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- Excellent thermal stability Frequency: 225
- 318 MHz Supply voltage: 13.6 V Output power: 8 W Power gain: 13.5 ± 0.7 dB Efficiency: 51 %
- 79 % BeO free amplifier
Description
The DB-55008L-318 is a mon source N-channel enhancement-mode lateral field effect RF power amplifier designed for VHF SEISMIC applications. Table 1.
Mechanical specification: L = 60 mm, W = 30 mm
Device summary
Order codes DB-55008L-318
February 2009
Rev 1
1/14
.st. 14
This is preliminary information on a new product now in development or...