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DB-55008L-450 - RF power amplifier using 1 x PD55008L-E N-channel enhancement-mode lateral MOSFETs

General Description

The DB-55008L-450 is a common source N-channel enhancement-mode lateral field effect RF power amplifier designed for UHF mobile applications.

Table 1.

Key Features

  • Excellent thermal stability Frequency: 318 - 450 MHz Supply voltage: 13.6 V Output power: 8 W Power gain: 14.6 ± 0.6 dB Efficiency: 52 % - 73 % BeO free amplifier.

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Datasheet Details

Part number DB-55008L-450
Manufacturer STMicroelectronics
File Size 699.48 KB
Description RF power amplifier using 1 x PD55008L-E N-channel enhancement-mode lateral MOSFETs
Datasheet download datasheet DB-55008L-450 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DB-55008L-450 www.datasheet4u.com RF power amplifier using 1 x PD55008L-E N-channel enhancement-mode lateral MOSFETs Preliminary Data Features ■ ■ ■ ■ ■ ■ ■ Excellent thermal stability Frequency: 318 - 450 MHz Supply voltage: 13.6 V Output power: 8 W Power gain: 14.6 ± 0.6 dB Efficiency: 52 % - 73 % BeO free amplifier Description The DB-55008L-450 is a common source N-channel enhancement-mode lateral field effect RF power amplifier designed for UHF mobile applications. Table 1. Mechanical specification: L = 60 mm, W = 30 mm Device summary Order codes DB-55008L-450 March 2009 Rev 1 1/14 www.st.com 14 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. Contents DB-55008L-450 Contents 1 www.