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DB-55015-490 - RF power amplifier using 1 x PD55015-E N-channel enhancement-mode lateral MOSFETs

General Description

The DB-55015-490 is a common source N-channel enhancement-mode lateral field effect RF power amplifier designed for UHF mobile radio applications.

Table 1.

Key Features

  • Excellent thermal stability Frequency: 420 - 490 MHz Supply voltage: 13.2 V Output power: 15 W Power gain: 13.5 ± 0.7 dB Efficiency: 51 % - 62 % Load mismatch: 20:1 Beo free amplifier.

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Datasheet Details

Part number DB-55015-490
Manufacturer STMicroelectronics
File Size 467.19 KB
Description RF power amplifier using 1 x PD55015-E N-channel enhancement-mode lateral MOSFETs
Datasheet download datasheet DB-55015-490 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DB-55015-490 www.datasheet4u.com RF power amplifier using 1 x PD55015-E N-channel enhancement-mode lateral MOSFETs Preliminary Data Features ■ ■ ■ ■ ■ ■ ■ ■ Excellent thermal stability Frequency: 420 - 490 MHz Supply voltage: 13.2 V Output power: 15 W Power gain: 13.5 ± 0.7 dB Efficiency: 51 % - 62 % Load mismatch: 20:1 Beo free amplifier Description The DB-55015-490 is a common source N-channel enhancement-mode lateral field effect RF power amplifier designed for UHF mobile radio applications. Table 1. Mechanical specification: L = 60 mm, W = 30 mm Device summary Order codes DB-55015-490 March 2009 Rev 1 1/14 www.st.com 14 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.