DB-55015-490 Datasheet | STMicroelectronics

.. RF power amplifier using 1 x PD55015-E N-channel enhancement-mode lateral MOSFETs Preliminary Data Features - - - - - - - - Excellent thermal stability Frequency: 420 - 490 MHz Supply voltage: 13.2 V Output power: 15 W Power gain: 13.5 ± 0.7 dB Efficiency: 51 % - 62 % Load mismatch: 20:1 Beo free amplifier Description The DB-55015-490 is a mon source N-channel enhancement-mode lateral field effect RF power amplifier designed for UHF mobile radio applications. Table 1. Mechanical specification: L = 60 mm, W = 30 mm Device summary Order codes DB-55015-490 March 2009 Rev 1 1/14 .st. 14 This is preliminary information on a new product now in...