Datasheet Details
| Part number | DB-55015-490 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 467.19 KB |
| Description | RF power amplifier using 1 x PD55015-E N-channel enhancement-mode lateral MOSFETs |
| Datasheet |
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The DB-55015-490 is a common source N-channel enhancement-mode lateral field effect RF power amplifier designed for UHF mobile radio applications.
Table 1.
| Part number | DB-55015-490 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 467.19 KB |
| Description | RF power amplifier using 1 x PD55015-E N-channel enhancement-mode lateral MOSFETs |
| Datasheet |
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|
| Part Number | Description | Manufacturer |
|---|---|---|
| DB-55015-165 | HF to 2000 MHz Class AB Common Source | ETC |
| DB-55003L-175 | HF to 2000 MHz Class AB Common Source | ETC |
| DB-55003L-512 | HF to 2000 MHz Class AB Common Source | ETC |
| DB-55008-500 | HF to 2000 MHz Class AB Common Source | ETC |
| DB-55008L-175 | HF to 2000 MHz Class AB Common Source | ETC |
| Part Number | Description |
|---|---|
| DB-55008L-318 | RF power amplifier using 1 x PD55008L-E N-channel enhancement-mode lateral MOSFETs |
| DB-55008L-450 | RF power amplifier using 1 x PD55008L-E N-channel enhancement-mode lateral MOSFETs |
| DB-499D-470 | RF power amplifier using 1 x START499D NPN RF silicon transistor |
| DB-85015-940 | RF power amplifier using 1 x PD85015-E N-channel enhancement-mode lateral MOSFETs |
| DB-900-80W | RF Power Amplifier Demoboard |
The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.