Datasheet4U Logo Datasheet4U.com

DB-85015-940 - RF power amplifier using 1 x PD85015-E N-channel enhancement-mode lateral MOSFETs

General Description

The DB-85015-940 is a common source N-channel enhancement-mode lateral field effect RF power amplifier designed for UHF radio applications.

Table 1.

Key Features

  • Excellent thermal stability Frequency: 860 - 940 MHz Supply voltage: 13.6 V Output power: 10 W Power gain: 15.7 ± 0.4 dB Efficiency: 60% - 62% Load mismatch: 20:1 BeO free amplifier.

📥 Download Datasheet

Datasheet Details

Part number DB-85015-940
Manufacturer STMicroelectronics
File Size 524.18 KB
Description RF power amplifier using 1 x PD85015-E N-channel enhancement-mode lateral MOSFETs
Datasheet download datasheet DB-85015-940 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
DB-2933-54 RF POWER amplifier using 2 x SD2933 N-Channel enhancement-mode lateral MOSFETs STMicroelectronics
DB-3 Silicon Bidirectional DIAC Semtech Corporation
DB-4 Bi-directional trigger diodes Leshan Radio Company
DB-54003-470 RF POWER amplifier using 1 x PD54003 N-Channel enhancement-mode lateral MOSFETs STMicroelectronics
DB-54003-470 HF to 2000 MHz Class AB Common Source ETC

Other Datasheets by STMicroelectronics

Part Number Description
DB-499D-470 RF power amplifier using 1 x START499D NPN RF silicon transistor
DB-55008L-318 RF power amplifier using 1 x PD55008L-E N-channel enhancement-mode lateral MOSFETs
DB-55008L-450 RF power amplifier using 1 x PD55008L-E N-channel enhancement-mode lateral MOSFETs
DB-55015-490 RF power amplifier using 1 x PD55015-E N-channel enhancement-mode lateral MOSFETs
DB-900-80W RF Power Amplifier Demoboard

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DB-85015-940 www.datasheet4u.com RF power amplifier using 1 x PD85015-E N-channel enhancement-mode lateral MOSFETs Features ■ ■ ■ ■ ■ ■ ■ ■ Excellent thermal stability Frequency: 860 - 940 MHz Supply voltage: 13.6 V Output power: 10 W Power gain: 15.7 ± 0.4 dB Efficiency: 60% - 62% Load mismatch: 20:1 BeO free amplifier Description The DB-85015-940 is a common source N-channel enhancement-mode lateral field effect RF power amplifier designed for UHF radio applications. Table 1. Mechanical specification: L = 60 mm, W = 30 mm Device summary Order codes DB-85015-940 March 2009 Rev 1 1/14 www.st.com 14 Contents DB-85015-940 Contents 1 www.datasheet4u.com Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.