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ESDA8V2-1J - EOS and ESD Transil protection

General Description

The ESDA8V2-1J is a unidirectional single line Transil diode designed specifically for the protection of integrated circuits in portable equipment and miniaturized electonic devices subject to EOS and ESD transient overvoltages.

Key Features

  • Breakdown voltage VBR = 8.2 V.
  • Unidirectional device.
  • High peak power dissipation: 500 W (8/20 µs waveform).
  • ESD protection level better than IEC 61000-4-2, level 4: 30 kV contact discharge.
  • Low leakage current (< 0.5 µA @ 5 V) Benefits.
  • High EOS and ESD protection level.
  • High integration.
  • Suitable for high density boards Complies with the following standards:.
  • IEC 61000-4-2 level 4.
  • ±15 kV (air discharge).
  • ±8 kV (contact discharge).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ESDA8V2-1J EOS and ESD Transil™ protection for charger and battery port Features ■ Breakdown voltage VBR = 8.2 V ■ Unidirectional device ■ High peak power dissipation: 500 W (8/20 µs waveform) ■ ESD protection level better than IEC 61000-4-2, level 4: 30 kV contact discharge ■ Low leakage current (< 0.