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LET9120 - RF power transistor

General Description

The LET9120 is a common source n-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.6 GHz.

Figure 1.

Table 1.

Key Features

  • Excellent thermal stability.
  • Common source configuration push-pull.
  • POUT = 120 W with 18 dB gain @ 860 MHz.
  • BeO-free package.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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LET9120 RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs Preliminary data Features ■ Excellent thermal stability ■ Common source configuration push-pull ■ POUT = 120 W with 18 dB gain @ 860 MHz ■ BeO-free package Description The LET9120 is a common source n-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.6 GHz. M246 Epoxy sealed Figure 1. Pin connection 12 1-2 Drain 4-5 Gate 5 4 3 Source Table 1. Device summary Order code LET9120 Package M246 Branding LET9120 October 2010 Doc ID 15509 Rev 5 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.