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LET9120M - RF power transistor

General Description

The LET9120M is a common source n-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz.

Figure 1.

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Key Features

  • Excellent thermal stability Common source configuration push-pull POUT = 120 W with 18 dB gain @ 860 MHz Internal input matching BeO-free package.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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LET9120M RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs Preliminary data Features ■ ■ ■ ■ ■ Excellent thermal stability Common source configuration push-pull POUT = 120 W with 18 dB gain @ 860 MHz Internal input matching BeO-free package Description The LET9120M is a common source n-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. M252 Epoxy sealed Figure 1. Pin connection 1 2 3 5 www.DataSheet4U.com 4 1. Drain 2. Drain 3. Source 4. Gate 5. Gate Table 1. Device summary Order code LET9120M Package M252 Branding LET9120M November 2009 Doc ID 16762 Rev 1 1/8 www.st.