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M28F410 - 4-Megabit Flash Memory

General Description

The M28F410 and M28F420 FLASH MEMORIES are non-volatile memories that may be erased electrically at the block level and programmed by byte or word.

The interface is directly compatible with most microprocessors.

SO44 and TSOP56 packages are used.

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📁 Similar Datasheet

Part Number Description Manufacturer
M28F008 8 MBIT (1 MBIT x 8) FLASH MEMORY Intel Corporation
M28F010 1024K (128K x 8) CMOS FLASH MEMORY Intel Corporation
M28F101 1 Mb FLASH MEMORY STMicroelectronics
M28F102 1 Mbit Flash Memory STMicroelectronics
M28F201 2 Mb FLASH MEMORY STMicroelectronics

Other Datasheets by STMicroelectronics

Part Number Description
M28F420 4-Megabit Flash Memory
M28F210 (M28F210 / M28F220) 2M Flash Memory
M28F211 (M28F211 / M28F221) 2M Flash Memory
M28F220 (M28F210 / M28F220) 2M Flash Memory
M28F221 (M28F211 / M28F221) 2M Flash Memory

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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M28F410 M28F420 4 Megabit (x8 or x16, Block Erase) FLASH MEMORY PRELIMINARY DATA DUAL x8 and x16 ORGANIZATION SMALL SIZE PLASTIC PACKAGES TSOP56 and SO44 MEMORY ERASE in BLOCKS – One 16K Byte or 8K Word Boot Block (top or bottom location) with hardware write and erase protection – Two 8K Byte or 4K Word Key Parameter Blocks – One 96K Byte or 48K Word Main Block – Three 128K Byte or 64K Word Main Blocks 5V ± 10% SUPPLY VOLTAGE 12V ± 5% PROGRAMMING VOLTAGE 100,000 PROGRAM/ERASE CYCLES PROGRAM/ERASE CONTROLLER AUTOMATIC STATIC MODE LOW POWER CONSUMPTION – 60μA Typical in Standby – 0.2μA Typical in Deep Power Down – 20/25mA Typical Operating Consumption (Byte/Word) HIGH SPEED ACCESS TIME: 70ns EXTENDED TEMPERATURE RANGES 44 1 TSOP56 (N) 14 x 20mm SO44 (M) Figure 1.